Gallium nitride for high power phased array radar
TriQuint Semiconductor, Lockheed Martin Announce Advanced Process Gallium Nitride With Improved Power, Efficiency, Stability
RICHARDSON, Texas, Dec. 1 /PRNewswire-FirstCall/ -- TriQuint Semiconductor
(Nasdaq: TQNT) and Lockheed Martin (NYSE: LMT) today announced breakthrough
results for power density, power added efficiency and radio frequency (RF)
lifetime for gallium nitride High Electron Mobility Transistor (HEMT) devices.
Achieving breakthrough performance and improved reliability is an important
step in significant size and weight reductions for radar-based defense
applications.
Gallium nitride HEMT devices provide higher power density and efficiency
required for high power phased array radar, electronic warfare, missile seeker
and communications systems.
"Gallium nitride's more than five-times improvement in power density
compared to gallium arsenide devices makes it ideal for high power radar and
communications applications," said Dr. Gailon Brehm, TriQuint's military
business unit manager. "Gallium nitride has capabilities from L-band up to
W-band, making it a very exciting technology for the future of millimeter and
microwave applications."
The device's increased power density can be the basis for simplifying
radar power distribution in large systems and can greatly reduce operational
electrical current. This advancement can lead to significant weight and size
reductions in shipboard systems and land-based applications.
TriQuint's new proprietary process increases gallium nitride HEMT power
density 50 percent beyond that of more conventional E-beam T-gate devices. In
addition, power added efficiency is 10 to 15 points higher, which allows these
devices to function with reduced power dissipation and lower operating
temperature.
Improved RF lifetime has been demonstrated with this advanced high voltage
gate structure as well. The reduced gate leakage and lower electric field in
the drain region contribute to the improved RF device lifetime.
"At Lockheed Martin, we have a passion for invention," said Dr. Mahesh
Kumar, director of Research and Technology for Lockheed Martin Maritime
Systems and Sensors' business in Moorestown, NJ. "Gallium Nitride will
redefine what is possible by providing our customers the reliable, compact,
high-powered technology they need to field solid-state phased array radar,
space systems and missiles to protect against emerging threats."
TriQuint has worked with gallium nitride since 1999 under the sponsorship
of Lockheed Martin. Partners also include General Electric Global Research
Center, the University of South Carolina, ATMI, Emcore and Sandia National
Labs.
ABOUT TRIQUINT:
TriQuint Semiconductor, Inc. (Nasdaq: TQNT) is a leading supplier of high
performance products for communications applications. The company focuses on
the specialized expertise, materials and know-how for RF/IF and optical
applications. The company enjoys diversity in its markets, applications,
products, technology and customer base. Markets include wireless phones, base
stations, optical networks, broadband and microwave equipment, and aerospace
and defense. TriQuint provides customers with standard and custom product
solutions as well as foundry services.
TriQuint is headquartered at 2300 NE Brookwood Parkway, Hillsboro, OR
97124 and can be reached at 503/615-9000 (fax 503/615-8900). Visit the
TriQuint web site at http://www.triquint.com.